FQB27N25TM-F085
Sanyo Semiconductor/onsemi
SSM3J306T(TE85L,F)
Part Number：
SSM3J306T(TE85L,F)
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET P-CH 30V 2.4A TSM
Packaging：
-
ROHS Status:
-
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Type P-Channel
- Package / Case TO-236-3, SC-59, SOT-23-3
- Drain to Source Voltage (Vdss) 30 V
- Power Dissipation (Max) 700mW (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
- Supplier Device Package TSM
- Current - Continuous Drain (Id) @ 25°C 2.4A (Ta)
- Rds On (Max) @ Id, Vgs 117mOhm @ 1A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 15 V
- Gate Charge (Qg) (Max) @ Vgs 2.5 nC @ 15 V
