FQB27N25TM-F085
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SSM5H12TU(TE85L,F)
Part Number：
SSM5H12TU(TE85L,F)
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N-CH 30V 1.9A UFV
Packaging：
-
ROHS Status:
-
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 30 V
- Vgs (Max) ±12V
- Power Dissipation (Max) 500mW (Ta)
- Vgs(th) (Max) @ Id 1V @ 1mA
- FET Feature Schottky Diode (Isolated)
- Current - Continuous Drain (Id) @ 25°C 1.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V
- Input Capacitance (Ciss) (Max) @ Vds 123 pF @ 15 V
- Rds On (Max) @ Id, Vgs 133mOhm @ 1A, 4V
- Gate Charge (Qg) (Max) @ Vgs 1.9 nC @ 4 V
- Supplier Device Package UFV
- Package / Case 6-SMD (5 Leads), Flat Leads
