FQB27N25TM-F085
Sanyo Semiconductor/onsemi
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
Sitemap
STF6N65M2
Part Number：
STF6N65M2
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
MOSFET N-CH 650V 4A TO220FP
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Drain to Source Voltage (Vdss) 650 V
- Vgs (Max) ±25V
- Package / Case TO-220-3 Full Pack
- Current - Continuous Drain (Id) @ 25°C 4A (Tc)
- Supplier Device Package TO-220FP
- Power Dissipation (Max) 20W (Tc)
- Rds On (Max) @ Id, Vgs 1.35Ohm @ 2A, 10V
- Gate Charge (Qg) (Max) @ Vgs 9.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 226 pF @ 100 V
