FQB27N25TM-F085
Sanyo Semiconductor/onsemi
STI10NM60N
Part Number：
STI10NM60N
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
MOSFET N-CH 600V 10A I2PAK
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Drain to Source Voltage (Vdss) 600 V
- Vgs (Max) ±25V
- Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
- Power Dissipation (Max) 70W (Tc)
- Supplier Device Package TO-262 (I2PAK)
- Current - Continuous Drain (Id) @ 25°C 10A (Tc)
- Rds On (Max) @ Id, Vgs 550mOhm @ 4A, 10V
- Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 50 V
