FQB27N25TM-F085
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STP11N65M2
Part Number：
STP11N65M2
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
MOSFET N-CH 650V 7A TO220
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-220-3
- Vgs(th) (Max) @ Id 4V @ 250µA
- Drain to Source Voltage (Vdss) 650 V
- Vgs (Max) ±25V
- Supplier Device Package TO-220
- Current - Continuous Drain (Id) @ 25°C 7A (Tc)
- Power Dissipation (Max) 85W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 410 pF @ 100 V
- Rds On (Max) @ Id, Vgs 670mOhm @ 3.5A, 10V
