FQB27N25TM-F085
Sanyo Semiconductor/onsemi
STU1HN60K3
Part Number：
STU1HN60K3
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
MOSFET N-CH 600V 1.2A IPAK
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
- Vgs(th) (Max) @ Id 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs 9.5 nC @ 10 V
- Power Dissipation (Max) 27W (Tc)
- Supplier Device Package TO-251 (IPAK)
- Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 50 V
- Current - Continuous Drain (Id) @ 25°C 1.2A (Tc)
- Rds On (Max) @ Id, Vgs 8Ohm @ 600mA, 10V
