FQB27N25TM-F085
Sanyo Semiconductor/onsemi
STU6N60M2
Part Number：
STU6N60M2
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
MOSFET N-CH 600V 4.5A IPAK
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Drain to Source Voltage (Vdss) 600 V
- Vgs (Max) ±25V
- Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
- Power Dissipation (Max) 60W (Tc)
- Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
- Supplier Device Package TO-251 (IPAK)
- Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.25A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 232 pF @ 100 V
- Gate Charge (Qg) (Max) @ Vgs 13.5 nC @ 10 V
