FQB27N25TM-F085
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SUP60N10-18P-E3
Part Number：
SUP60N10-18P-E3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay / Siliconix
Description：
MOSFET N-CH 100V 60A TO220AB
Packaging：
-
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- Operating Temperature -55°C ~ 175°C (TJ)
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
- Current - Continuous Drain (Id) @ 25°C 60A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
- Power Dissipation (Max) 3.75W (Ta), 150W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 50 V
- Rds On (Max) @ Id, Vgs 18.3mOhm @ 15A, 10V
