FQB27N25TM-F085
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TK100L60W,VQ
Part Number：
TK100L60W,VQ
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N-CH 600V 100A TO3P
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 360 nC @ 10 V
- Supplier Device Package TO-3P(L)
- Package / Case TO-3PL
- Input Capacitance (Ciss) (Max) @ Vds 15000 pF @ 30 V
- Rds On (Max) @ Id, Vgs 18mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id 3.7V @ 5mA
- Power Dissipation (Max) 797W (Tc)
