FQB27N25TM-F085
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TK10A80E,S4X
Part Number：
TK10A80E,S4X
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N-CH 800V 10A TO220SIS
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Power Dissipation (Max) 50W (Tc)
- Package / Case TO-220-3 Full Pack
- Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
- Vgs(th) (Max) @ Id 4V @ 1mA
- Drain to Source Voltage (Vdss) 800 V
- Supplier Device Package TO-220SIS
- Current - Continuous Drain (Id) @ 25°C 10A (Ta)
- Rds On (Max) @ Id, Vgs 1Ohm @ 5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
