FQB27N25TM-F085
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TK11A65W,S5X
Part Number：
TK11A65W,S5X
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N-CH 650V 11.1A TO220SIS
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Package / Case TO-220-3 Full Pack
- Supplier Device Package TO-220SIS
- Power Dissipation (Max) 35W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 11.1A (Ta)
- Vgs(th) (Max) @ Id 3.5V @ 450µA
- Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 300 V
- Rds On (Max) @ Id, Vgs 390mOhm @ 5.5A, 10V
