FQB27N25TM-F085
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TK13A55DA(STA4,QM)
Part Number：
TK13A55DA(STA4,QM)
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N-CH 550V 12.5A TO220SIS
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Package / Case TO-220-3 Full Pack
- Vgs(th) (Max) @ Id 4V @ 1mA
- Supplier Device Package TO-220SIS
- Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
- Power Dissipation (Max) 45W (Tc)
- Current - Continuous Drain (Id) @ 25°C 12.5A (Ta)
- Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 25 V
- Drain to Source Voltage (Vdss) 550 V
- Rds On (Max) @ Id, Vgs 480mOhm @ 6.3A, 10V
