FQB27N25TM-F085
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TK18E10K3,S1X(S
Part Number：
TK18E10K3,S1X(S
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N-CH 100V 18A TO220-3
Packaging：
-
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Package / Case TO-220-3
- Supplier Device Package TO-220-3
- Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 18A (Ta)
- Rds On (Max) @ Id, Vgs 42mOhm @ 9A, 10V
