FQB27N25TM-F085
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TK32E12N1,S1X
Part Number：
TK32E12N1,S1X
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N CH 120V 60A TO-220
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Package / Case TO-220-3
- Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
- Supplier Device Package TO-220
- Vgs(th) (Max) @ Id 4V @ 500µA
- Drain to Source Voltage (Vdss) 120 V
- Current - Continuous Drain (Id) @ 25°C 60A (Tc)
- Power Dissipation (Max) 98W (Tc)
- Rds On (Max) @ Id, Vgs 13.8mOhm @ 16A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 60 V
