FQB27N25TM-F085
Sanyo Semiconductor/onsemi
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
Sitemap
TK35A08N1,S4X
Part Number：
TK35A08N1,S4X
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N-CH 80V 35A TO220SIS
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Package / Case TO-220-3 Full Pack
- Drain to Source Voltage (Vdss) 80 V
- Power Dissipation (Max) 30W (Tc)
- Supplier Device Package TO-220SIS
- Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 35A (Tc)
- Rds On (Max) @ Id, Vgs 12.2mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id 4V @ 300µA
- Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 40 V
