FQB27N25TM-F085
Sanyo Semiconductor/onsemi
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
Sitemap
TK35N65W,S1F
Part Number：
TK35N65W,S1F
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N-CH 650V 35A TO247
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C 35A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Package / Case TO-247-3
- Power Dissipation (Max) 270W (Tc)
- Supplier Device Package TO-247
- Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 300 V
- Rds On (Max) @ Id, Vgs 80mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id 3.5V @ 2.1mA
