FQB27N25TM-F085
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TK39N60W,S1VF
Part Number：
TK39N60W,S1VF
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N CH 600V 38.8A TO247
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Package / Case TO-247-3
- Power Dissipation (Max) 270W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
- Supplier Device Package TO-247
- Current - Continuous Drain (Id) @ 25°C 38.8A (Ta)
- Rds On (Max) @ Id, Vgs 65mOhm @ 19.4A, 10V
- Vgs(th) (Max) @ Id 3.7V @ 1.9mA
- Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 300 V
