FQB27N25TM-F085
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TK4A60DB(STA4,Q,M)
Part Number：
TK4A60DB(STA4,Q,M)
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N-CH 600V 3.7A TO220SIS
Packaging：
-
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Package / Case TO-220-3 Full Pack
- Supplier Device Package TO-220SIS
- Power Dissipation (Max) 35W (Tc)
- Current - Continuous Drain (Id) @ 25°C 3.7A (Ta)
- Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
- Vgs(th) (Max) @ Id 4.4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 25 V
- Rds On (Max) @ Id, Vgs 2Ohm @ 1.9A, 10V
