FQB27N25TM-F085
Sanyo Semiconductor/onsemi
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
Sitemap
TK55S10N1,LQ
Part Number：
TK55S10N1,LQ
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N-CH 100V 55A DPAK
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Operating Temperature 175°C (TJ)
- Vgs(th) (Max) @ Id 4V @ 500µA
- Supplier Device Package DPAK+
- Power Dissipation (Max) 157W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 55A (Ta)
- Rds On (Max) @ Id, Vgs 6.5mOhm @ 27.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 3280 pF @ 10 V
