FQB27N25TM-F085
Sanyo Semiconductor/onsemi
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
Sitemap
TK5Q60W,S1VQ
Part Number：
TK5Q60W,S1VQ
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N CH 600V 5.4A IPAK
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Supplier Device Package IPAK
- Power Dissipation (Max) 60W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V
- Package / Case TO-251-3 Stub Leads, IPAK
- Current - Continuous Drain (Id) @ 25°C 5.4A (Ta)
- Rds On (Max) @ Id, Vgs 900mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id 3.7V @ 270µA
- Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 300 V
