FQB27N25TM-F085
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TK60D08J1(Q)
Part Number：
TK60D08J1(Q)
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N-CH 75V 60A TO220
Packaging：
-
ROHS Status:
-
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Package / Case TO-220-3
- Drain to Source Voltage (Vdss) 75 V
- Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
- Power Dissipation (Max) 140W (Tc)
- Current - Continuous Drain (Id) @ 25°C 60A (Ta)
- Vgs(th) (Max) @ Id 2.3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds 5450 pF @ 10 V
- Rds On (Max) @ Id, Vgs 7.8mOhm @ 30A, 10V
- Supplier Device Package TO-220(W)
