FQB27N25TM-F085
Sanyo Semiconductor/onsemi
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
Sitemap
TK62J60W,S1VQ
Part Number：
TK62J60W,S1VQ
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N-CH 600V 61.8A TO3P
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Package / Case TO-3P-3, SC-65-3
- Drain to Source Voltage (Vdss) 600 V
- Power Dissipation (Max) 400W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
- Supplier Device Package TO-3P(N)
- Input Capacitance (Ciss) (Max) @ Vds 6500 pF @ 300 V
- Current - Continuous Drain (Id) @ 25°C 61.8A (Ta)
- Vgs(th) (Max) @ Id 3.7V @ 3.1mA
- Rds On (Max) @ Id, Vgs 38mOhm @ 30.9A, 10V
