FQB27N25TM-F085
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TK65E10N1,S1X
Part Number：
TK65E10N1,S1X
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N CH 100V 148A TO220
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Package / Case TO-220-3
- Supplier Device Package TO-220
- Vgs(th) (Max) @ Id 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 5400 pF @ 50 V
- Power Dissipation (Max) 192W (Tc)
- Current - Continuous Drain (Id) @ 25°C 148A (Ta)
- Rds On (Max) @ Id, Vgs 4.8mOhm @ 32.5A, 10V
