FQB27N25TM-F085
Sanyo Semiconductor/onsemi
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
Sitemap
TK70D06J1(Q)
Part Number：
TK70D06J1(Q)
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N-CH 60V 70A TO220
Packaging：
-
ROHS Status:
-
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60 V
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Package / Case TO-220-3
- Power Dissipation (Max) 45W (Tc)
- Vgs(th) (Max) @ Id 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 5450 pF @ 10 V
- Current - Continuous Drain (Id) @ 25°C 70A (Ta)
- Supplier Device Package TO-220(W)
- Rds On (Max) @ Id, Vgs 6.4mOhm @ 35A, 10V
