FQB27N25TM-F085
Sanyo Semiconductor/onsemi
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
Sitemap
TK9J90E,S1E
Part Number：
TK9J90E,S1E
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N-CH 900V 9A TO3P
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Package / Case TO-3P-3, SC-65-3
- Current - Continuous Drain (Id) @ 25°C 9A (Ta)
- Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
- Power Dissipation (Max) 250W (Tc)
- Drain to Source Voltage (Vdss) 900 V
- Supplier Device Package TO-3P(N)
- Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
- Rds On (Max) @ Id, Vgs 1.3Ohm @ 4.5A, 10V
- Vgs(th) (Max) @ Id 4V @ 900µA
