FQB27N25TM-F085
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TPC6006-H(TE85L,F)
Part Number：
TPC6006-H(TE85L,F)
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N-CH 40V 3.9A VS-6
Packaging：
-
ROHS Status:
-
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Surface Mount
- Package / Case SOT-23-6 Thin, TSOT-23-6
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 40 V
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Power Dissipation (Max) 700mW (Ta)
- Vgs(th) (Max) @ Id 2.3V @ 1mA
- Supplier Device Package VS-6 (2.9x2.8)
- Current - Continuous Drain (Id) @ 25°C 3.9A (Ta)
- Gate Charge (Qg) (Max) @ Vgs 4.4 nC @ 10 V
- Rds On (Max) @ Id, Vgs 75mOhm @ 1.9A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 251 pF @ 10 V
