FQB27N25TM-F085
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TPC8110(TE12L,Q,M)
Part Number：
TPC8110(TE12L,Q,M)
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET P-CH 40V 8A 8SOP
Packaging：
-
ROHS Status:
-
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Package / Case 8-SOIC (0.173", 4.40mm Width)
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 40 V
- Vgs (Max) ±20V
- FET Type P-Channel
- Vgs(th) (Max) @ Id 2V @ 1mA
- Current - Continuous Drain (Id) @ 25°C 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
- Power Dissipation (Max) 1W (Ta)
- Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
- Supplier Device Package 8-SOP (5.5x6.0)
- Rds On (Max) @ Id, Vgs 25mOhm @ 4A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 2180 pF @ 10 V
