FQB27N25TM-F085
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TPC8115(TE12L,Q,M)
Part Number：
TPC8115(TE12L,Q,M)
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET P-CH 20V 10A 8SOP
Packaging：
-
ROHS Status:
-
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Package / Case 8-SOIC (0.173", 4.40mm Width)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 20 V
- Vgs (Max) ±8V
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
- Current - Continuous Drain (Id) @ 25°C 10A (Ta)
- Power Dissipation (Max) 1W (Ta)
- Vgs(th) (Max) @ Id 1.2V @ 200µA
- Supplier Device Package 8-SOP (5.5x6.0)
- Input Capacitance (Ciss) (Max) @ Vds 9130 pF @ 10 V
- Gate Charge (Qg) (Max) @ Vgs 115 nC @ 5 V
- Rds On (Max) @ Id, Vgs 10mOhm @ 5A, 4.5V
