FPF1C2P5BF07A
Sanyo Semiconductor/onsemi
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
Sitemap
TPC8213-H(TE12LQ,M
Part Number：
TPC8213-H(TE12LQ,M
Category：
FET, MOSFET Arrays
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET 2N-CH 60V 5A 8SOP
Packaging：
-
ROHS Status:
-
Currency:
USD
Specifications
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Package / Case 8-SOIC (0.173", 4.40mm Width)
- Technology MOSFET (Metal Oxide)
- FET Feature Logic Level Gate
- Configuration 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 5A
- Power - Max 450mW
- Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
- Vgs(th) (Max) @ Id 2.3V @ 1mA
- Supplier Device Package 8-SOP (5.5x6.0)
- Rds On (Max) @ Id, Vgs 50mOhm @ 2.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 625pF @ 10V
