FQB27N25TM-F085
Sanyo Semiconductor/onsemi
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
Sitemap
TPC8A02-H(TE12L,Q)
Part Number：
TPC8A02-H(TE12L,Q)
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N-CH 30V 16A 8SOP
Packaging：
-
ROHS Status:
-
Currency:
USD
Specifications
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Package / Case 8-SOIC (0.173", 4.40mm Width)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 16A (Ta)
- Power Dissipation (Max) 1W (Ta)
- Vgs(th) (Max) @ Id 2.3V @ 1mA
- Supplier Device Package 8-SOP (5.5x6.0)
- Rds On (Max) @ Id, Vgs 5.6mOhm @ 8A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 1970 pF @ 10 V
