FQB27N25TM-F085
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TPC8A05-H(TE12L,QM
Part Number：
TPC8A05-H(TE12L,QM
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N-CH 30V 10A 8SOP
Packaging：
-
ROHS Status:
-
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Package / Case 8-SOIC (0.173", 4.40mm Width)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 30 V
- Current - Continuous Drain (Id) @ 25°C 10A (Ta)
- Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
- FET Feature Schottky Diode (Body)
- Power Dissipation (Max) 1W (Ta)
- Vgs(th) (Max) @ Id 2.3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 10 V
- Supplier Device Package 8-SOP (5.5x6.0)
- Rds On (Max) @ Id, Vgs 13.3mOhm @ 5A, 10V
