FQB27N25TM-F085
Sanyo Semiconductor/onsemi
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TPH4R50ANH,L1Q
Part Number：
TPH4R50ANH,L1Q
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N CH 100V 60A SOP ADV
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Package / Case 8-PowerVDFN
- Vgs(th) (Max) @ Id 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V
- Supplier Device Package 8-SOP Advance (5x5)
- Current - Continuous Drain (Id) @ 25°C 60A (Tc)
- Rds On (Max) @ Id, Vgs 4.5mOhm @ 30A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 5200 pF @ 50 V
- Power Dissipation (Max) 1.6W (Ta), 78W (Tc)
