FQB27N25TM-F085
Sanyo Semiconductor/onsemi
IXTU08N100P
基本参数
- 安装类型 Through Hole
- 场效应管类型 N-Channel
- 技术 MOSFET (Metal Oxide)
- 漏源电压 (Vdss) 1000 V
- 包装/箱 TO-251-3 Short Leads, IPAK, TO-251AA
- 电流 - 连续漏极 (Id) @ 25°C 8A (Tc)
- 供应商设备包 TO-251AA
