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  • image of Diode Arrays>BYV32E-300PQ
  • image of Diode Arrays>BYV32E-300PQ
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Manufacturer
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Encapsulation
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BYV32E-300PQ
Diode Arrays
WeEn Semiconductors Co., Ltd
DIODE ARRAY GP 300V 10A TO220E
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image of Diode Arrays>BYV32E-300PQ
BYV32E-300PQ
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
Specification sheet
BYV32E-300PQ
Diode Arrays
WeEn Semiconductors Co., Ltd
DIODE ARRAY GP
Diode Arrays
Tube
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrWeEn Semiconductors Co., Ltd
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-220-3
Mounting TypeThrough Hole
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35 ns
TechnologyStandard
Diode Configuration1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode)10A
Supplier Device PackageTO-220E
Operating Temperature - Junction175°C (Max)
Voltage - DC Reverse (Vr) (Max)300 V
Voltage - Forward (Vf) (Max) @ If1.25 V @ 10 A
Current - Reverse Leakage @ Vr20 µA @ 300 V
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