GPI90010DF88 Single FETs, MOSFETs_Shenzhen Hongchangsheng Electronic Technology CO.,LTD. _Supplier electronic component distributor

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GPI90010DF88

Single FETs, MOSFETs

GaNPower

GaNFET N-CH 900V 10A DFN8x8

Tape & Reel (TR)

2980

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$5.6250

inventory: 2980

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$5.6250

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GPI90010DF88

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Specification sheet：

GPI90010DF88

Single FETs, MOSFETs

GaNPower

GaNFET N-CH 9

Single FETs, MOSFETs

Tape & Reel (TR)

2980

Specification sheet

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	GaNPower
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	8-DFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	10A
Rds On (Max) @ Id, Vgs	162mOhm @ 2.5A, 6V
Vgs(th) (Max) @ Id	1.2V @ 3.5mA
Supplier Device Package	8-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)	6V
Vgs (Max)	+7.5V, -12V
Drain to Source Voltage (Vdss)	900 V
Gate Charge (Qg) (Max) @ Vgs	2.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds	78 pF @ 400 V

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